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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A NPN switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES * High current (max. 800 mA) * Low voltage (max. 40 V). APPLICATIONS * Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.
3
2N2222; 2N2222A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
handbook, halfpage 1
3 2
MAM264
2
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency 2N2222 2N2222A toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA Tamb 25 C IC = 10 mA; VCE = 10 V IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 - - - 250 MHz MHz ns open base - - - - 75 30 40 800 500 - V V mA mW open emitter - - 60 75 V V CONDITIONS MIN. MAX. UNIT
1997 May 29
2
Philips Semiconductors
Product specification
NPN switching transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A VEBO emitter-base voltage 2N2222 2N2222A IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C Tcase 25 C open collector - - - - - - - open base - - PARAMETER collector-base voltage CONDITIONS open emitter - -
2N2222; 2N2222A
MIN.
MAX. 60 75 30 40 5 6 800 800 200 500 1.2 +150 200 +150 V V V V V V
UNIT
mA mA mA mW W C C C
-65 - -65
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 350 146 UNIT K/W K/W
1997 May 29
3
Philips Semiconductors
Product specification
NPN switching transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current 2N2222 ICBO collector cut-off current 2N2222A IEBO hFE emitter cut-off current DC current gain IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tamb = 150 C IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 1 V; note 1 IC = 150 mA; VCE = 10 V; note 1 hFE hFE DC current gain 2N2222A DC current gain 2N2222 2N2222A VCEsat collector-emitter saturation voltage 2N2222 VCEsat collector-emitter saturation voltage 2N2222A VBEsat base-emitter saturation voltage 2N2222 VBEsat base-emitter saturation voltage 2N2222A Cc Ce fT collector capacitance emitter capacitance 2N2222A transition frequency 2N2222 2N2222A F noise figure 2N2222A IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz IC = 20 mA; VCE = 20 V; f = 100 MHz IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 500 mA; VCE = 10 V; note 1 IC = 10 mA; VCE = 10 V; Tamb = -55 C IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tamb = 150 C CONDITIONS
2N2222; 2N2222A
MIN. - - - - - 35 50 75 50 100 35 30 40 - - - - - - 0.6 - - - 250 300 -
MAX. 10 10 10 10 10 - - - - 300 - - - 400 1.6 300 1 1.3 2.6 1.2 2 8 25 - - 4
UNIT nA A nA A nA
mV V mV V V V V V pF pF MHz MHz dB
1997 May 29
4
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Switching times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA - - - - - - 35 10 25 250 200 60 ns ns ns ns ns ns
ndbook, full pagewidth
VBB
VCC
RB (probe) oscilloscope 450 Vi R1 R2
RC Vo (probe) 450 DUT oscilloscope
MLB826
Vi = 9.5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 68 ; R2 = 325 ; RB = 325 ; RC = 160 . VBB = -3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 .
Fig.2 Test circuit for switching times.
1997 May 29
5
Philips Semiconductors
Product specification
NPN switching transistors
PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads
2N2222; 2N2222A
SOT18/13
j B
seating plane wM AMBM
1
k D1
b
2 3
a A D A L
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.31 4.74 a 2.54 b 0.47 0.41 D 5.45 5.30 D1 4.70 4.55 j 1.03 0.94 k 1.1 0.9 L 15.0 12.7 w 0.40 45
OUTLINE VERSION SOT18/13
REFERENCES IEC B11/C7 type 3 JEDEC TO-18 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
1997 May 29
6
Philips Semiconductors
Product specification
NPN switching transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
2N2222; 2N2222A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 May 29
7
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 29
Document order number:
9397 750 02161

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